SI2303ADS

Si2303ADS New Product Vishay Siliconix P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.240 @ VGS = –10 V 0.460 @ VGS = –4.5 V ID (A)b –1.4 –1.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS –0.75 0.9 0.57 –55 to 150 Symbol VDS VGS 5 sec –30 "20 –1.4 –1.1 –10 Steady State Unit V –1.3 –1.0 A –0.6 0.7 0.45 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71837 S-20617—Rev. B, 29-Apr-02 www.vishay.com RthJA Symbol Typical 115 140 Maximum 140 175 Unit _C/W 1 Si2303ADS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS...