PMF400UN
N-channel µTrenchMOS™ ultra low level FET
Rev. 01 — 11 February 2004
M3D102
Product data
1. Product profile
1....
PMF400UN
N-channel µTrenchMOS™ ultra low level FET
Rev. 01 — 11 February 2004
M3D102
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 0.56 W s ID ≤ 0.83 A s RDSon ≤ 480 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT323 (SC-70), simplified outline and symbol Description gate (g) source (s) drain (d)
3 d
Simplified outline
Symbol
1 Top view
2
MBC870
g s
SOT323 (SC-70)
MBB076
Philips Semiconductors
PMF400UN
N-channel µTrenchMOS™ ultra low level FET
3. Ordering information
Table 2: Ordering information Package Name PMF400UN SC-70 Description Plastic surface mounted package; 3 leads Version SOT323 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VG...