PMF290XN
N-channel µTrenchMOS™ extremely low level FET
Rev. 01 — 27 February 2004
M3D102
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold volta...
