IGB03N120H2

IGP03N120H2, IGW03N120H2 HighSpeed 2-Technology Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A nd IGB03N120H2 C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) P-TO-247-3-1 (TO-247AC) Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGW03N120H2 IGP03N120H2 IGB03N120H2 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) °C VGE Ptot ±20 62.5 V W ICpuls Symbol VCE IC 9.6 3.9 9.9 9.9 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 3A 3A 3A Eoff 0.15mJ 0.15mJ 0.15mJ Tj 150°C 150°C 150°C Package P-TO-247 P-TO-220-3-1 P-TO-263 (D PAK) 2 Ordering Code Q67040-S4596 Q67040-S4599 Q67040-S4598 Power Semiconductors 1 Rev. 2, Mar-04 IGP03N120H2, IGW03N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, devi...