IC61LV256

IC61LV256 Document Title 32K x 8 Hight Speed SRAM with 3.3V Revision History Revision No 0A 0B History Initial Draft Add Pb-free parts Draft Date April 19,2002 November 28,2003 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. AHSR027-0B 11/28/2003 1 IC61LV256 32K x 8 HIGH SPEED CMOS STATIC RAM FEATURES High-speed access times: -- 8, 10, 12, 15 ns Automatic power-down when chip is deselected CMOS low power operation -- 345 mW (max.) operating -- 7 mW (max.) CMOS standby TTL compatible interface levels Single 3.3V power supply Fully static operation: no clock or refresh required Three-state outputs DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 600 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory. The IC61LV256 is available in the JEDEC ...