SPW20N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Peri...
SPW20N60S5 Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
VDS RDS(on) ID
600 0.19 20
P-TO247
V Ω A
Type SPW20N60S5
Package P-TO247
Ordering Code Q67040-S4238
Marking 20N60S5
Maximum Ratings Parameter Symbol ID Value Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 20 13
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = 10 A, VDD = 50 V
I D puls EAS
40 690 1 20 ±20
±30
mJ
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
I D = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz)
Power dissipation, T C = 25°C
A V W °C
VGS Ptot T j , T stg
208 -55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30
SPW20N60S5
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 20 A, Tj = 125 °C
Symbol dv/dt
Value 20
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Symbol min. RthJC RthJA Values typ. max. 0.6 50 260 °C K/W Unit
Tsold
Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche break...