34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
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Wideband Linear Amplifiers
. . . d...
Description
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by CA2830C/D
Wideband Linear Amplifiers
. . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with temperature and linear amplification as a result of the push–pull circuit design. Specified Characteristics at VCC = 24 V, TC = 25°C: Frequency Range — 5 to 200 MHz Output Power — 800 mW Typ @ 1 dB Compression, f = 200 MHz Power Gain — 34.5 dB Typ @ f = 100 MHz PEP — 800 mW Typ @ – 32 dB IMD Noise Figure — 4.7 dB Typ @ f = 200 MHz ITO — 46 dBm @ f = 200 MHz All Gold Metallization for Improved Reliability Unconditional Stability Under All Load Conditions
CA2830C
34.5 dB 5–200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS
MAXIMUM RATINGS
Rating DC Supply Voltage RF Power Input Operating Case Temperature Range Storage Temperature Range Symbol VCC Pin TC Tstg Value 28 +5 – 20 to +100 – 40 to +100 Unit Vdc dBm °C °C CASE 714F–03, STYLE 1 (CA)
ELECTRICAL CHARACTERISTICS (TC = 25°C, VCC = 24 V, 50 Ω system unless otherwise noted)
Characteristic Frequency Range Gain Flatness (f = 5 – 200 MHz) Power Gain (f = 100 MHz) Noise Figure, Broadband (f = 200 MHz) Power Output — 1 dB Compression (f = 5 – 200 MHz) Power Output — 1 dB Compression (f = 5 – 200 MHz, VCC = 28 V) Third Order Intercept (See Figure 10, f1 = 200 MHz) Input/Output VSWR (f = 5 – 200 MHz) Second Harmonic Distortion (Tone at 100 mW, f2H ...
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