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FCH10A09

Nihon Inter Electronics Corporation

Schottky Barrier Diode

S B D T y p e : FCH10A09 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cat...


Nihon Inter Electronics Corporation

FCH10A09

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S B D T y p e : FCH10A09 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Ftor Approx Net Weight: 1.75g FCH10A09 Unit 90 10 Tc=122°C 50 Hz Full Sine Wave Resistive Load V A 11.1 A 120 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.5 A °C °C Nm Electrical Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol Conditions IRM Tj= 25°C, VRM= VRRM per arm VFM Tj= 25°C, IFM= 5 A per arm Rth(j-c) Junction to Case Rth(c-f) Cace to Fin Min. Typ. Max. Unit - - 1 mA - - 0.85 V - - 3 °C /W - - 1.5 °C /W FCH10A09 OUTLINE DRAWING (Dimentions in mm) ...




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