TECHNICAL DATA
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/291
Devices 2N2906A 2N2906AL 2N2906AUA ...
TECHNICAL DATA
PNP SMALL SIGNAL SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/291
Devices 2N2906A 2N2906AL 2N2906AUA 2N2906AUB
2N2907A 2N2907AL 2N2907AUA 2N2907AUB
Qualified Level JAN
JANTX JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
@ TA = +250C @ TC = +250C
VCEO
VCBO
VEBO
IC PT(1) PT(2 / 3)
Operating & Storage Junction Temperature Range
TJ, Tstg
1) Derate linearly 2.28 mW/0C for TA > +250C. 2) Derate linearly 10.3 mW/0C for TC > +250C.
3) For UA and UB surface mount case outlines: PT = 1.16 W; derate linearly 6.6mW/0C for TC > +250C.
All Types 60 60 5.0 600 0.4 1.8
-65 to +200
Unit Vdc Vdc Vdc mAdc W W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc
V(BR)CEO
Collector-Base Cutoff Current
VCE = 50 Vdc
ICBO
VCE = 60 Vdc
Collector-Base Cutoff Current VCE = 50 Vdc
ICES
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
VEB = 5.0 Vdc
TO-18* (TO-206AA)
4 PIN* 2N2906AUA, 2N2907AUA
3 PIN* 2N2906AUB, 2N2907AUB
*See appendix A for package outline
Min. Max.
Unit
60 Vdc
µAdc
10 10
ηAdc
50 ηAdc
ηAdc
50 10
µAdc
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2N2906A, 2N2907A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics ON CHARACTERISTICS (4)
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