Power Transistors
2SC5552
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
■ Features...
Power
Transistors
2SC5552
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
■ Features
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching Wide safe operation area
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
/ ■ Absolute Maximum Ratings TC = 25°C
18.6±0.5 (2.0)
Solder Dip
5.45±0.3
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
1 700
V
c e. d ty Collector-emitter voltage (E-B short) VCES
1 700
3.3±0.3
5.5±0.3
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
600
(2.0)
V
a e cle con Emitter-base voltage (Collector open) VEBO
7
V
lifecy , dis Base current
IB
8
A
n u duct typed Collector current
IC
16
A
te tin Pro ed Peak collector current *
ICP
30
A
ur tinu Collector power dissipation
PC
65
W
ing fo iscon Ta = 25°C
3.5
in n follow ed d Junction temperature
Tj
150
°C
s lan Storage temperature
Tstg −55 to +150 °C
a o clude pe, p Note) *: Non-repetitive peak collector current
M isccontinueindteinnance ty ■ Electrical Characteristics TC = 25°C ± 3°C
/Dis ma Parameter
Symbol
Conditions
D ance type, Collector-base cutoff current (Emitter open)
Maintentenance Emitter-base cutoff current (Collector open) ain Forward current transfer ratio d m Collector-emitter saturation voltage (plane Base-emitter saturatio...
