Document
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RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz
Features
l l l l l
UF281 OOV
v2.00
N-Channel Enhancement DMOS Structure Lower Capacitances Lower
&lode Device Operation
for Broadband
High Saturated Output Power
Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current ( Symbol V DS V GS ‘DS 1 Rating 65 20 12 250 200 -55 to +150 0.7 ( Units
V V
A
Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance
PD
TJ T sic 8 IP
W
“C “C “crw
Electrical _____.._~~
Parameter Drain-Source Drain-Source Gate-Source
Characteristics at 25°C
Symbol Breakdown Min Max Units lest Conditions
Voltage
BV,,,
IDSS ‘GSS
65 ,
2.0 1.5 -
3.0 ) 3.0 6.0 135 90 24 ] I
V mA
fl
V,.=O.O V. I& V,,=28.0 ,
1 v,,=2ov, I
5.0 mA
LeakageCurrent Leakage Current
V, V,,=O.O V’
vDs=o.o v
Gate Threshold Voltage ForwardTransconductance input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency . Load Mismatch Tolerance - Per Side
V GSIW
GM c 15s C ass
V
S pF PF pF dB % -
V,,=lO.O
V, 1,,=300.0
V, 1,,=3000.0
mA‘
mA, AV,,=l .O V, 80 us Pulse’
V,,=10.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0
V, F=l .O MHz’ V, F=l .O MHz’ V, F=l .O MHz’ V, 1,,=600.0 mA, P,,$OO.O W, F=SOO MHz
C RSS GP
10 50
3O:l
V, 1,,=600.0
mA, P,,,=lOO.O W. F=500 MHZ
W, F=500 MHz
VSWR-T
-
V, lDD=800.0 mA, PbbylOO.0
Specifications Subject to Change Wiihout Notice.
M/A-COM, Inc.
RF MOSFET Power Transistor,
lOOW, 28V
UF281 OOV
v2.00
Typical Broadband
Performance
Curves
EFFICIENCY
80
vs FREQUENCY
120 loo
POWER OUTPUT
P&O
vs SUPPLY VOLTAGE
P,,=lO W I,,=600 mA (Push-Pull Device)
W I,,=600 mA F&O0 MHz
0 100
200
300 FREQUENCY (MHz)
400
500
14
16
20
24
26
22
SUPPLY VOLTAGE(V)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=600 mA (Push-Pull Device)
2
4
6
8
10
12
POWER INPUT(W)
Specifications
Subject to Change Without Notice.
M/A-COM,
Inc.
RF MOSFET Power Transistor, IOOW, 28V
UF281OOV
v2.00
Typical Device Impedance
7
Frequency (MHz) 100 300 500
5, (OHMS) 4.5 - j 6.0 2.25 - j 1.75 1.5 + j 5.5 V,,=28 V, I,,=690 mA, P,,,=lOO.O Watts
Z,,,, (OHMS) 14.5+j 0.5 7.5 + j 1 .O 3.5 - j 3.5 ,I
Z,, is the series equivalent input impedance of the device from gate to gate. is.tQe optimum series equivalent load impedance as measured from drain to drain. Z LOAD
RF Test Fixture
0
0
0
PARTS Cl.c6 c2.Q c4 C5 c6.c7 c%ClO Cl1 Cl2 Rl .R4 rum Ll K Tl
LlS.1
CHlP CAPACITOR. 2.OpF ATC B CHIP CAPACITOR. 5OOCPF CHIP CAPAC~OF!. 37pF ATC B CHIP CAPACITOR. 25OpF ATC B CHIP CAPACTTOR. .015uF CHIP CAPACTTOR. 5KvF ATC B CHIP CAPAClTOR. O.BpF ATC B ELECTROLtllC CAPACITCR, 5ouF 50 VOLTS
RESISTOR. 27 OHM 25 WA-i-f RESISTOR 22K OHM 25 WATT INDUCTOR. 5 TURNS OF NO. 18 AWG ON ‘.lO INDUCTOR. 10 TURNS OF NC. 22 AWG ON R4 ,:, BALUN TRANSFORMER ‘.OBS X 3’ LONG 50 0”M SEMI-RIGID COAX
72
,:I BALUN TRANSFORMER. 25 C+iM SEMI-RIGID COAX ‘.070’ X 2.5’ LONG
T3
13 BALUN TRANSFORMER. 10 OHM SEMI-RIGIG COAX ‘.070.X 2.5’ LONG
14
,:, BALUN TRANSFORMER. 50 OHM SEMI-RIGID COAX ‘.OW X 4’ LONG
91 BOARD JlJ2 J3J4JS HEATSINK
uF261oov ROGERS 5870. .Ml’lliICK CONNECTOR TYPE-N BANANA JACK FINNED ALUMINUM, DIN 7305OlB2-03
Specifications
Subject
to Change Without Notice.
WA-COM, Inc.
9-295
.