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UF281OOV Dataheets PDF



Part Number UF281OOV
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description RF MOSFET Power Transistor
Datasheet UF281OOV DatasheetUF281OOV Datasheet (PDF)

* e-5 -,--5 3 .---= = = -a== =- an AMP company RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz Features l l l l l UF281 OOV v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower &lode Device Operation for Broadband High Saturated Output Power Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current ( Symbol V DS V GS ‘DS 1 Rating 65 20 12 250 200 -55 to +150 0.7 ( Units V V A Powe.

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* e-5 -,--5 3 .---= = = -a== =- an AMP company RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz Features l l l l l UF281 OOV v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Lower &lode Device Operation for Broadband High Saturated Output Power Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current ( Symbol V DS V GS ‘DS 1 Rating 65 20 12 250 200 -55 to +150 0.7 ( Units V V A Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance PD TJ T sic 8 IP W “C “C “crw Electrical _____.._~~ Parameter Drain-Source Drain-Source Gate-Source Characteristics at 25°C Symbol Breakdown Min Max Units lest Conditions Voltage BV,,, IDSS ‘GSS 65 , 2.0 1.5 - 3.0 ) 3.0 6.0 135 90 24 ] I V mA fl V,.=O.O V. I& V,,=28.0 , 1 v,,=2ov, I 5.0 mA LeakageCurrent Leakage Current V, V,,=O.O V’ vDs=o.o v Gate Threshold Voltage ForwardTransconductance input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency . Load Mismatch Tolerance - Per Side V GSIW GM c 15s C ass V S pF PF pF dB % - V,,=lO.O V, 1,,=300.0 V, 1,,=3000.0 mA‘ mA, AV,,=l .O V, 80 us Pulse’ V,,=10.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, F=l .O MHz’ V, F=l .O MHz’ V, F=l .O MHz’ V, 1,,=600.0 mA, P,,$OO.O W, F=SOO MHz C RSS GP 10 50 3O:l V, 1,,=600.0 mA, P,,,=lOO.O W. F=500 MHZ W, F=500 MHz VSWR-T - V, lDD=800.0 mA, PbbylOO.0 Specifications Subject to Change Wiihout Notice. M/A-COM, Inc. RF MOSFET Power Transistor, lOOW, 28V UF281 OOV v2.00 Typical Broadband Performance Curves EFFICIENCY 80 vs FREQUENCY 120 loo POWER OUTPUT P&O vs SUPPLY VOLTAGE P,,=lO W I,,=600 mA (Push-Pull Device) W I,,=600 mA F&O0 MHz 0 100 200 300 FREQUENCY (MHz) 400 500 14 16 20 24 26 22 SUPPLY VOLTAGE(V) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=600 mA (Push-Pull Device) 2 4 6 8 10 12 POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, Inc. RF MOSFET Power Transistor, IOOW, 28V UF281OOV v2.00 Typical Device Impedance 7 Frequency (MHz) 100 300 500 5, (OHMS) 4.5 - j 6.0 2.25 - j 1.75 1.5 + j 5.5 V,,=28 V, I,,=690 mA, P,,,=lOO.O Watts Z,,,, (OHMS) 14.5+j 0.5 7.5 + j 1 .O 3.5 - j 3.5 ,I Z,, is the series equivalent input impedance of the device from gate to gate. is.tQe optimum series equivalent load impedance as measured from drain to drain. Z LOAD RF Test Fixture 0 0 0 PARTS Cl.c6 c2.Q c4 C5 c6.c7 c%ClO Cl1 Cl2 Rl .R4 rum Ll K Tl LlS.1 CHlP CAPACITOR. 2.OpF ATC B CHIP CAPACITOR. 5OOCPF CHIP CAPAC~OF!. 37pF ATC B CHIP CAPACITOR. 25OpF ATC B CHIP CAPACTTOR. .015uF CHIP CAPACTTOR. 5KvF ATC B CHIP CAPAClTOR. O.BpF ATC B ELECTROLtllC CAPACITCR, 5ouF 50 VOLTS RESISTOR. 27 OHM 25 WA-i-f RESISTOR 22K OHM 25 WATT INDUCTOR. 5 TURNS OF NO. 18 AWG ON ‘.lO INDUCTOR. 10 TURNS OF NC. 22 AWG ON R4 ,:, BALUN TRANSFORMER ‘.OBS X 3’ LONG 50 0”M SEMI-RIGID COAX 72 ,:I BALUN TRANSFORMER. 25 C+iM SEMI-RIGID COAX ‘.070’ X 2.5’ LONG T3 13 BALUN TRANSFORMER. 10 OHM SEMI-RIGIG COAX ‘.070.X 2.5’ LONG 14 ,:, BALUN TRANSFORMER. 50 OHM SEMI-RIGID COAX ‘.OW X 4’ LONG 91 BOARD JlJ2 J3J4JS HEATSINK uF261oov ROGERS 5870. .Ml’lliICK CONNECTOR TYPE-N BANANA JACK FINNED ALUMINUM, DIN 7305OlB2-03 Specifications Subject to Change Without Notice. WA-COM, Inc. 9-295 .


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