RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz
Features
N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive . . Mode Device
UF2820R
Absolute Maximum Ratings at 25°C
Parameter Drain-SourceVoltage Gate-Source Voltage Drain-Source Current Power Dissipation ...
