Document
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an AMP company
RF MOSFET Power 100 - 500 MHz
Features
l l l l l
Transistor,
4OW, 28V
UF2840G
v2.00
N-Channel Enhancement DMOS Structure Lower Capacitances
Mode Device Operation Devices
for Broadband
High Saturated Output Power Lower Noise Figure Than Competitive
Absolute Maximum Ratings at 25°C
Parameter
Drain-Source Gate-Source Voltage Voltage
Symbol
V OS V GS ‘OS P, 1 T, (
Rating
65 20 4’ 116 200 -55 to +150 1.52 I
Units
V V A w “C “C “C/w
1 F I 6.22 I 6.48 1 a245 I .2X5 I
Drain-Source&rent Power Dissipation 1 JunctionTemperature
I
Storage Temperature
Thermal Resistance
TST0
8JC
1
K
I
l.18 I 203
I
.070 I
x180 I
Electrical Characteristics
at 25°C
* Per Side Specificatms Subject to Change Without Notice.
M/A-COM,
Inc.
RF MOSFET Power Transistor,
4OW, 28V
U F2840G
v2.00
Typical Broadband Performance
Curves
GAIN vs FREQUENCY
V,,=28 V I,,=500 mA P,,,=40 W
EFFICIENCY
V,,=28
vs FREQUENCY
mA P,,,~40 W
V I,,=500
25
" 3 6 . $ 0 ii ::
65
.
60
55
-
100
200
300
400
500
100
200
300
400
500
FREQUENCY
(MHz)
FREQUENCY
(%)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=500 mA
0.25
0.5
1
2
2.5
POWER INPUT (W)
Specifications Subject to Change Without Notice.
M/A-COM,
Inc.
RF MOSFET Power Transistor,
4OW, 28V
U F2840G
v2.00
Typical Device Impedance
Frequency (MHz)
100
Z,, (OHMS)
6.0 - j 20.0 3.5 -j 11.5 2.5 - j 5.5 1 ( 3.0 + j 0.0 4.0 + j 3.0 V, I,,=500 mA, P,,,=40.0 Watts 1 1
Z LOAD (OHMS)
25.0 + j 27.0 16.5 + j 19.5 13.0 + j 13.0 12.O+j9.0 12.O+j5.0 I 1,
200 300 I 400 500
I
V,,=28
Z,, is the series equivalent
input impedance
of the device from gate to gate. as measured from drain to ground.
Z LOAD is the optimum series equivalent
load impedance
RF Test Fixture
VGS
VDS - 28 VOLTS IDQ = 500r'A Ll +VDD
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Cl0 -
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PARTS LIST Cl,C3 CZ C4,C5,C6, c7 C8 c9, CL? Cl0 Cl1 Cl3 Cl4 Ll LZ,L3 L4 Rl,RZ R3 Tl T2 T3 Ql BOARD CAPACITOR 1SpF CAPACITOR 7pF CHIP CAPACITOR 62.0pF ATC CHIP CAPACITOR 9.lpF ATC CAPACITOR 1000pF TRIWER CAPACITOR t-500pF CAPACITOR ATC 5BopF MONOLITHIC CERAMIC CAPACITOR 0.luF ELECTROLYTIC CAPACITOR 50uF 50 V. 4 TURNS OF NO. 22 AWG ON '0.35" 6 TURNS OF NO. 22 AWG ON '0.35" 8 TURNS OF NO. 22 AWG ON R3 RESISTOR 12K OHMS 0.25 WATT RESISTOR 33 OHMS 3 WA-ITS 50 OHM SEMI-RIGID COAX 2.1" X '0.085" 25 OHM SEMI-RIGID COAX 2X 2.3" X '0.070" 25 OHM SEMI-RIGID COAX 3.3" X '0.070" UF2840G FR4 0.062"
Specifications Subjectto Change WithoutNotice.
MIA-COM, Inc.
.