MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB8N50E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB8N50E
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount pac...
