MTB3N60E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N60E/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Capability Specified at Elevated Temperature Low Stored Gate Charge for Efficient Switching Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–repetitive Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID ID IDM PD D MTB3N6...