MTB4N80E1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Short Heatsink Tab Manufactured — Not Sheared Specially Designed Leadframe for Maximum Power Dissipation MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM ® D G CASE 418C–01, Style 2 D2PAK–SL S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage ...