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MTB6N60E1 Dataheets PDF



Part Number MTB6N60E1
Manufacturers Motorola
Logo Motorola
Description TMOS POWER FET
Datasheet MTB6N60E1 DatasheetMTB6N60E1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB6N60E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB6N60E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation D MTB6N60E1 Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHM ® G CASE 418C–01, Style 2 D2PAK–SL S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size. Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 600 600 ± 20 ± 40 6.0 4.6 18 125 1.0 2.5 – 55 to 150 405 RθJC RθJA RθJA TL 1.0 62.5 50 260 °C/W Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ TJ, Tstg EAS °C This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 TMOS ©Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MTB6N60E1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 600 Vdc, VGS = 0 Vdc) (VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc) Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 6.0 Adc) (VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C) Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge (VDS = 300 Vdc, ( Vd , ID = 6 6.0 0 Ad Adc, , VGS = 10 Vdc) (VDS = 300 Vdc, 6.0 Adc, Vd ID = 6 0 Ad VGS = 10 Vdc Vdc, RG = 9.1 Ω) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 6.0 Adc, VGS = 0 Vdc) (IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — trr (IS = 6.0 6 0 Adc, Ad , VGS = 0 Vdc, Vd , ( dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. LD — LS — 7.5 4.5 — — nH nH ta tb QRR — — — — 0.83 0.72 266 166 100 2.5 1.5 — — — — — µC ns Vdc — — — — — — — — 14 19 40 26 35.5 8.1 14.1 15.8 30 40 80 50 50 — — — nC ns (VDS = 25 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Ciss Coss Crss — — — 1498 158 29 2100 217 56 pF VGS(th) 2.0 — RDS(on) VDS(on) — — gFS 2.0 6.0 — 5.5 8.6 7.6 — mhos — 3.0 7.1 0.94 4.0 — 1.2 Vdc mV/°C Ohms Vdc V(BR)DSS 600 — IDSS — — IGSS — — — — 1.0 50 100 nAdc — 689 — — Vdc mV/°C µAdc Symbol Min Typ Max Unit Reverse Recovery Time 2 Motorola TMOS Power MOSFET Transistor Device Data MTB6N60E1 TYPICAL ELECTRICAL CHARACTERISTICS 12 TJ = 25°C I D , DRAIN CURRENT (AMPS) 10 8V 8 6 5V 4 2 4V 0 0 2 6 10 14 4 8 12 16 VDS.


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