MRF654

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF654/D NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55% Built–In Matching Network for Broadband Operation Gold Metallized, Emitter Ballasted for Long Life and Reliability Capable of 20:1 VSWR Load Mismatch at 15.5 V Supply Voltage Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF654 15 W, 470 MHz RF POWER TRANSISTOR NPN SILICON CASE 244–04, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 16 36 4.0 4.0 44 0.25 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 4.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector–Cutoff Current (VCE = 15 Vdc, VBE = 0) V(BR)CEO V(BR)C...