Freescale Semiconductor Technical Data
Document Number: MRF6S19140H Rev. 2, 7/2005
RF Power Field Effect Transistors
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Freescale Semiconductor Technical Data
Document Number: MRF6S19140H Rev. 2, 7/2005
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc @ 30 kHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications Low Gold Plating Thickness on Leads, 40µ″ Nominal. Pb - Free and RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19140HR3 MRF6S19140HSR3
1990 MHz, 29 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF6S19140H...
