MRF607

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz 11.5 minimum Gain @ 12.5V, 175 MHz 50% Efficiency @ 12.5V, 175 MHz 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR TO-39 (common collector) DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 16 36 4.0 330 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 3.5 28 Watts mW/ ºC MSC1322.PDF 10-25-99 MRF607 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCES BVCEO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0 Vdc) Collector-Emitter Sustaining Voltage (IC=25 mAdc, IB=0) Emitter-Base Breakdown Voltage (IE = .5 mA, IC = 0) Collector Cutoff Current (VCE = 10 Vdc, IB = 0) 36 16 4.0 Value Typ. Max. .3 Unit Vdc Vdc Vdc mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 20 150 - DYNAMIC Symbol COB Test Conditions Min. Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) Value Typ. Max. 15 Unit pF FUNCTIONAL Symbol GPE Power Gain Test Conditions Min. Test Circu...