MRF6401

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6401/D NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 – 2.0 GHz frequency range. It has been specifically designed for use in Personal Communications Network (PCN) base station and INMARSAT Standard M applications. Specified 20 Volts, 1.66 GHz Characteristics: Output Power — 0.5 Watts Gain — 10 dB Min Class A Operation Specified 20 Volts, 1.88 GHz Characteristics: Output Power — 0.5 Watts Gain — 9.0 dB Min Class A Operation Circuit Board Photomaster Available by Ordering Document MRF6401PHT/D from Motorola Literature Distribution. MRF6401 0.5 W, 1.0 to 2.0 GHz RF LINEAR POWER TRANSISTOR CASE 305C–02, STYLE 1 SOE200–PILL MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Operating Junction Temperature Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO TJ PD Tstg Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Symbol Min Typ Value 22 45 3.5 200 5.8 0.033 – 65 to +150 Unit Vdc Vdc Vdc °C Watts W/°C °C THERMAL CHARACTERISTICS Max 30 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, RB = 75 Ω) Emitter–Base Breakdown Voltage (IE = 0.25 mAdc) Collector–Base Breakdown Voltage (IC = 1 mAdc) V(BR)CE...