MRF652

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF652/D NPN Silicon RF Power Transistors Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB Series Equivalent Large–Signal Characterization Gold Metallized, Emitter Ballasted for Long Life and Reliability Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 16 36 4.0 2.0 25 143 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C °C MRF652 MRF652S 5.0 W, 512 MHz RF POWER TRANSISTORS NPN SILICON CASE 244–04, STYLE 1 MRF652 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 7.0 Unit °C/W CASE 249–06, STYLE 1 MRF652S ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) Collector–Emitter Breakdow...