MRF6522-70R3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D The RF MOSFET Line RF Power Field Effect Transistor Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts Output Power, P1dB — 80 Watts (Typ) Power Gain @ P1dB — 16 dB (Typ) Efficiency @ P1dB — 58% (Typ) Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. N - Channel Enhancement - Mode Lateral MOSFET MRF6522−70R3 921 - 960 MHz, 70 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET Freescale Semiconductor, Inc... CASE 465D - 05, STYLE 1 NI - 600 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 65 ± 20 7 159 0.9 - 65 to +150 200 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 1.1 Unit °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF...