K4S641632E

K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S641632E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part No. K4S641632E-TC50/TL50 K4S641632E-TC55/TL55 K4S641632E-TC60/TL60 K4S641632E-TC70/TL70 K4S641632E-TC75/TL75 Max Freq. 200MHz(CL=3) 183MHz(CL=3) 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) 100MHz(CL=3) LVTTL 54 TSOP(II) Interface P...