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JANTX1N5553 Dataheets PDF



Part Number JANTX1N5553
Manufacturers Microsemi
Logo Microsemi
Description (1N5550 / 1N5551 / 1N5552 / 1N5553 / 1N5554)
Datasheet JANTX1N5553 DatasheetJANTX1N5553 Datasheet (PDF)

The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. INCH-POUND MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE This specification is approved for use by .

  JANTX1N5553   JANTX1N5553


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The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. INCH-POUND MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE This specification is approved for use by all Departments and Agencies of the Department of Defense. * 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die. 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C and ratings apply to all case outlines. Col. 1 Type Col. 2 V(BR) Col. 3 VRWM and V(BR)min Col. 4 IO1 TL = +55°C; L = .375 inch (1) (2) (3) A dc 5 5 5 5 5 Col. 5 IFSM IO = 2 A dc tp = 1/120 s TA = +55°C A(pk) 100 100 100 100 100 Col. 6 TJ Col. 7 IO2 TA = +55°C (2) (4) A dc 3 3 3 3 3 Col. 8 TSTG The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. V dc 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US 200 400 600 800 1,000 200 400 600 800 1,000 °C -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 °C -65 to +175 -65 to +175 -65 to +175 -65 to +175 -65 to +175 (1) Derate linearly at 41.6 mA/°C above TL = +55°C at L = .375 inch (9.53 mm). (2) An IO of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the maximum junction temperature at or below +200°C as proven by the junction temperature rise test (see 6.5). Barometric pressure reduced: 1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet). 1N5553, 1N5554 - 33 mmHg (70,000 feet). (3) Does not apply to surface mount devices. (4) Derate linearly at 25 mA/°C above TA = +55°C. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to [email protected] . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http://www.dodssp.daps.mil. AMSC N/A FSC 5961 MIL-PRF-19500/420H 1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25°C. IR2 at TA = +100°C Type Vf at If = 9.0 A(pk) 1 percent duty cycle, 8.3 ms max pulse width Min V(pk) 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N5553, 1N5553US 1N5554, 1N5554US 0.6 0.6 0.6 0.6 0.6 Max V(pk) 1.2 1.2 1.2 1.3 1.3 IR1 RθJL RθJEC µA dc (max) at VR (V dc) 1.0 1.0 1.0 1.0 1.0 200 400 600 800 1,000 µA dc (max) at VR (V dc) 75 75 75 75 75 200 400 600 800 1,000 See (1) (1) RθJL ≤ 22°C/W for L = .375 inch (9.52 mm). RθJEC ≤ 11°C/W for L = 0 (US version). 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 * Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.dap.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2 MIL-PRF-19500/420H Dimensions Ltr Inches Min BL BD LD LL LU .130 .115 .037 .900 Max .300 .180 .042 1.300 .050 Millimeters Min 3.30 2.92 0.94 22.86 Max 7.62 4.57 1.07 33.02 1.27.


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