MUN5211DW1T1 Series
Preferred Devices
Dual Bias Resistor Transistors
NPN Silicon Surface Mount Transistors with Monolit...
MUN5211DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
http://onsemi.com
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.
(3) R1 Q1
(2) R2
(1)
Q2 R2 (4) R1 (5) (6)
Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel
6 1
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
SOT−363 CASE 419B STYLE 1
MARKING DIAGRAM
6 XXd 1 XX = Specific Device Code d = Date Code = (See Page 2)
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Thermal Resistan...