MP4504

MP4504 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4504 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications Unit: mm · · · · Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 5 W (Ta = 25°C) High collector current: IC (DC) = −5 A (max) High DC current gain: hFE = 2000 (min) (VCE = −5 V, IC = −3 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Isolation voltage Junction temperature Storage temperature range Ta = 25°C PT Tc = 25°C VIsol Tj Tstg 25 1000 150 −55 to 150 V °C °C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating −100 −100 −6 −5 −8 −0.5 3.0 5.0 W Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-32B1B Weight: 6.0 g (typ.) Array Configuration R1 R2 3 6 7 10 1 5 8 12 2 4 9 11 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 1 2002-11-20 MP4504 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25°C) Thermal resistance of junction to case (4 devices operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) ΣRth (j-c) 5.0 °C/W Symbol Max Unit ΣRth (j-a) 25 °C/W TL 260 °C Electrical Charact...