SUB50N02-09
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095...
Description
SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V
ID (A)a
20 15
D D D D
TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested
APPLICATIONS
D High-Side Synchronous Buck DC/DC Conversion − Desktop − Server
www.DataSheet4U.com
D
TO-252
Drain Connected to Tab G D S
G
Top View S N-Channel MOSFET
Ordering Information: SUD50N02-09P SUD50N02-09P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TA = 25_C TC = 25_C TA = 25_C TC= 100_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
Limit
20 "20 20 14 100 4.3 29 42 6.5a 39.5 −55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72034 S-41168—Rev. C, 14-Jun-04 www.vishay.com t v 10 sec Steady State
Symbol
RthJA RthJC
Typical
19 40 3.1
Maximum
23 50 3.8
Unit
_C/W
1
SUD50N02-09P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate T...
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