MSM514400E

Semiconductor MSM514400E 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE This version : Sep.2000 DESCRIPTION The MSM514400E is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514400E is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP. FEATURES 1,048,576-word × 4-bit configuration Single 5V power supply, ± 10% tolerance Input Output Refresh : TTL compatible, low input capacitance : TTL compatible, 3-state : 1024 cycles/16 ms Fast page mode, read modify write capability CAS before RAS refresh, hidden refresh, RAS-only refresh capability Multi-bit test mode capability Package options: 26/20-pin 300mil plastic SOJ 26/20-pin 300mil plastic TSOP (SOJ26/20-P-300-1.27) (TSOPII26/20-P-300-1.27-K) (Product : MSM514400E-xxSJ) (Product : MSM514400E-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM514400E-60 MSM514400E-70 Access Time (Max.) tRAC 60ns 70ns tAA 30ns 35ns tCAC 15ns 20ns tOEA 15ns 20ns Power Dissipation Cycle Time (Min.) Operating (Max.) Standby (Max.) 110ns 130ns 468mW 413mW 5.5mW 1/14 MSM514400E PIN CONFIGRATION (TOP VIEW) DQ1 DQ2 WE RAS A9 1 2 3 4 5 26 25 24 23 22 VSS DQ4 DQ3 CAS OE DQ1 DQ2 WE RAS A9 1 2 3 4 5 26 25 24 23 22 VSS DQ4 DQ3 CAS OE A0 9 A1 10 A2 11 A3 12 VCC 13 ...