DRAM / FAST PAGE MODE TYPE
E2L0013-17-Y1 ¡ Semiconductor
¡ Semiconductor MSM514262
262,144-Word ¥ 4-Bit Multiport DRAM
This version: Jan. 1998 MS...
Description
E2L0013-17-Y1 ¡ Semiconductor
¡ Semiconductor MSM514262
262,144-Word ¥ 4-Bit Multiport DRAM
This version: Jan. 1998 MSM514262 Previous version: Dec. 1996
DESCRIPTION
The MSM514262 is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM and a 512-word by 4-bit SAM. Its RAM and SAM operate independently and asynchronously. The MSM514262 supports three types of operation : random access to RAM port, high speed serial access to SAM port and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM514262 features the block write and flash write functions on the RAM port and a split data transfer capability on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flip-flops.
FEATURES
Single power supply: 5 V ± 10% Full TTL compatibility Multiport organization RAM: 256K word ¥ 4 bits SAM: 512 word ¥ 4 bits Fast page mode Write per bit Masked flash write Masked block write RAS only refresh CAS before RAS refresh Hidden refresh Serial read/write 512 tap location Bidirectional data transfer Split transfer Masked write transfer Refresh: 512 cycles/8 ms Package options: 28-pin 400 mil plastic ZIP (ZIP28-P-400-1.27) 28-pin 400 mil plastic SOJ (SOJ28-P-400-1.27)
(Product : MSM514262-xxZS) (Product : MSM514262-xxJS) xx indicates speed rank.
PRODUCT FAMILY
Family MSM514262-70 MSM514262-80 MSM514...
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