MPS6520

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by MPS6520/D COLLECTOR 3 2 BASE NPN MPS6520 * MPS6521 1 EMITTER PNP MPS6523 Voltage and current are negative for PNP transistors *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage MPS6520, MPS6521 MPS6523 Collector – Base Voltage MPS6520, MPS6521 MPS6523 Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO 25 — VCBO 40 — VEBO IC PD PD TJ, Tstg 4.0 100 625 5.0 1.5 12 – 55 to +150 — 25 Vdc mAdc mW mW/°C Watts mW/°C °C — 25 Vdc 1 2 3 NPN PNP Unit Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) MPS6520, MPS6521 MPS6523 V(BR)CEO V(BR)EBO ICBO — — 0.05 0.05 25 4.0 — — Vdc Vdc mAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola...