STP80NS04Z

® STP80NS04Z N - CHANNEL CLAMPED 7.5mΩ - 80A - TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET TYPE STP80NS04Z s s s s V DSS R DS(on) ID 80 A CLAMPED <0.008 Ω TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION TEMPERATURE 3 1 2 DESCRIPTION This fully clamped Mosfet is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. APPLICATIONS ABS, SOLENOID DRIVERS s MOTOR CONTROL s DC-DC CONVERTERS s TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DG V GS ID ID I DG I GS I DM ( ) P tot Drain- gate Voltage G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 C Drain Gate Current (continuous) G ate Source Current (continuous) Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor V ESD (G-S ) G ate-Source ESD (HBM - C= 100pF , R=1.5 k Ω) V ESD (G-D) G ate-Drain ESD (HBM - C= 100pF, R=1.5 k Ω) V ESD ( D-S) Drain-Source ESD (HBM - C= 100pF, R=1.5 k Ω ) Ts tg Tj Storage Temperature Max. Operating Junction Temperature o Parameter Drain-source Voltage (VGS = 0) Value CLAMPED CLAMPED CLAMPED 80 60...