STP80NF55-08

N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB80NF55-08/-1 STP80NF55-08 s s STP80NF55-08 STB80NF55-08 STB80NF55-08-1 VDSS 55 V 55 V RDS(on) <0.008 Ω <0.008 Ω ID 80 A 80 A 3 1 TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE 3 12 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT D2PAK TO-263 I2PAK TO-262 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID() ID IDM() Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ± 20 80 57 320 300 2 870 -55 to 175 (1) Starting Tj = 25 oC, ID = 40A, VDD = 30V Unit V V V A A A W W/°C mJ °C () Current limited by package () Pulse width limited by safe operating area. March 2002 . 1/11 STB80NF55-08/-1 STP80NF55-08 THERMAL DATA Rthj-case Rthj-amb Tl Th...