STP80NF06

STP80NF06 - STB80NF06 STW80NF06 N-CHANNEL 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET™ II POWER MOSFET TYPE STB80NF06 STP80NF06 STW80NF06 s s s s VDSS 60 V 60 V 60 V RDS(on) < 0.010 Ω < 0.010 Ω < 0.010 Ω ID 80 A 80 A 80 A 3 1 2 1 2 3 TYPICAL RDS(on) = 0.0065Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE TO-220 3 1 TO-247 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-AC & DC-DC CONVERTERS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS ORDER CODES PART NUMBER STB80NF06T4 STP80NF06 STW80NF06 MARKING B80NF06 P80NF06 W80NF06 PACKAGE D2PAK TO-220 TO-247 PACKAGING TAPE & REEL TUBE TUBE March 2004 1/10 STP80NF06 - STB80NF06 - STW80NF06 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (*) ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 6...