N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
Description
STP80N06-10
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STP80N06-10
s s s s s s s
V DSS 60 V
R DS(on) < 0.010 Ω
ID 80 A
TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION ...
