STP80N05-09

STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE STP80N05-09 s s s s s s VDS S 50 V RDS(o n) < 0.009 Ω ID 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE 1 2 3 APPLICATIONS s SYNCROUNOUS RECTIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-DC & DC-AC CONVERTER ABSOLUTE MAXIMUM RATINGS TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR V GS ID ID I DM () Pt ot Parameter Drain-source Voltage (VGS = 0) Drain- gate Vol tage (R GS = 20 kΩ ) Gate-s ource Voltage Drain Current (conti nuous) at Tc = 25 C Drain Current (conti nuous) at Tc = 100 C Drain Current (pulsed) Total Dis sipation at Tc = 25 o C Derating Fac tor dV/dt(1 ) Peak Diode Recov ery vo ltage slo pe Tstg Tj Storage Temperature Max. Operating Junction Temperature o o Value 50 50 ± 20 80 60 320 150 1 5 -65 to 175 175 (1) ISD ≤ 60 A, di/dt ≤ 200 A/ms, V DD ≤ V(BR)DSS, TJ ≤ TJMAX Unit V V V A A A W W/ oC V/ns o o C C () Pulse width limited by safe operating area March 1997 1/9 STP80N05-09 THERMAL DATA Rt hj-case R th j-amb R thc-sin k Tl Thermal Resist ance Junc tion-case Max Thermal Resist ance Junc tion-ambi ent Max Thermal Resist ance Case -sink Typ Max imum Lead Temperature For Sol dering Purpose 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive...