N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
Description
STP80N03L-06
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
TENTATIVE DATA TYPE STP80N03L-06
s s s s s s s s
V DSS 30 V
R DS(on) < 0.006 Ω
ID 80 A (*)
TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDN...
