STD129

Semiconductor STD129 NPN Silicon Transistor Description Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA) Suitable for low voltage large current drivers Switching Application Ordering Information Type NO. STD129 Marking STD129 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 PIN Connections 1. Emitter 2. Collector 3. Base 0.38 KST-9060-001 1 STD129 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VC B O VC E O VE B O IC PC Tj T stg Ratings 40 15 7 5 625 150 -55~150 Unit V V V A mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) fT C ob Test Condition IC =50µA, IE=0 IC =1mA, IB=0 IE=50µA, IC =0 VCB=30V, IE=0 VEB=5V, IC =0 VCE=2V, IC =0.5A VCE=2V, IC =3A IC =3A, IB=150mA VCE=6V, IE=-50mA VCB=20V, IE=0, f=1MHz Min. 40 15 7 160 40 - Typ. 150 - Max. 0.1 0.1 320 0.3 50 Unit V V V µA µA V MHz pF KST-9060-001 2 STD129 Electrical Ch...