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STD1NB50

ST Microelectronics
Part Number STD1NB50
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Aug 28, 2005
Detailed Description ® STD1NB50 N - CHANNEL 500V - 7.5Ω - 1.4A IPAK PowerMESH™ MOSFET TYPE ST D1NB50 s s s s s s V DSS 500V R DS(on) < 9Ω...
Datasheet PDF File STD1NB50 PDF File

STD1NB50
STD1NB50

Overview
® STD1NB50 N - CHANNEL 500V - 7.
5Ω - 1.
4A IPAK PowerMESH™ MOSFET TYPE ST D1NB50 s s s s s s V DSS 500V R DS(on) < 9Ω ID 1.
4 A TYPICAL RDS(on) = 7.
5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR SMD DPAK VERSION CONTACT SALES OFFICE IPAK TO-251 (Suffix ”-1”) 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalle...


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