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STD1NB60

ST Microelectronics
Part Number STD1NB60
Manufacturer ST Microelectronics
Description N-CHANNEL POWER MOSFET
Published Aug 28, 2005
Detailed Description ® STD1NB60 N - CHANNEL 600V - 7.4Ω - 1A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD1NB60 s s s s s V DSS ...
Datasheet PDF File STD1NB60 PDF File

STD1NB60
STD1NB60

Overview
® STD1NB60 N - CHANNEL 600V - 7.
4Ω - 1A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD1NB60 s s s s s V DSS 600 V R DS(on) < 8.
5 Ω ID 1A TYPICAL RDS(on) = 7.
4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 1 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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