UHF WIDE-BAND AMPLIFIER
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4012FU
UHF Wide Band Amplifier Applications
TA4012FU
Fe...
Description
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4012FU
UHF Wide Band Amplifier Applications
TA4012FU
Features
z Low current: ICC = 6.5 mA z Wide band: f = 2.0 GHz (3dB down) z Operatin supply voltage: VCC = 1.5 to 2.2 V
Pin Assignment
Absolute Maximum Ratings (Ta = 25°C)
Weight: 0.006 g (typ.)
Characteristic
Symbol
Rating
Unit
Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature
VCC1
2.2
V
VCC2 (Note 1)
3
V
PD (Note 2)
300
mW
Topr
−40 to 85
°C
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: When VCC is operated at less than 1/4 duty cycle. Note 2: When mounted on the glass epoxy of 2.5 cm2 × 1.6 t
Caution
This device electrostatic sensitivity. Please handle with caution.
Start of commercial production
1999-03
1
2014-03-01
TA4012FU
Electrical Characteristics (Ta = 25°C, Zg = ZI = 50 Ω)
Chara...
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