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TA4017FT

Toshiba Semiconductor

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA4017FT TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4017FT VHF Wide Band Amplifier Applications Fea...


Toshiba Semiconductor

TA4017FT

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Description
TA4017FT TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4017FT VHF Wide Band Amplifier Applications Features · · · High gain: |S21|2 = 13dB (@45 MHz) Low distortion: IM3 = 42dB (@45 MHz) Operating supply voltage: VCC = 4.75 V~5.25 V Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Total power dissipation Operating temperature Storage temperature Symbol VCC PD (Note 1) Topr Tstg Rating 5.5 300 -40 to 85 -55 to 150 2 Unit V mW °C °C Weight: 0.008g (typ.) Note 1: When mounted on the glass epoxy of 2.5 cm ´ 1.6 t Pin Assignment OUT GND OUT (1) (2) 6 5 4 U5 1 2 3 IN (1) IN (2) VCC 1 2003-03-12 TA4017FT Electrical Characteristics (Ta = 25°C, VCC = 5 V, Zg = Zl = 50 W) Characteristics Circuit current Band width Input return loss Insertion gain Isolation Output return loss Noise figure Output power at 1dB gain compression Symbol ICC BW |S11| 2 Test Circuit Test Condition Non Carrier (Note 2) f = 45 MHz f = 45 MHz f = 400 MHz f = 45 MHz Min 15 0.7 ¾ 10 ¾ ¾ ¾ ¾ ¾ 0 ¾ 34 ¾ Typ. 19 1 -0.8 13 12.5 -40 -3.5 3 3 2 2 42 42 Max 25 ¾ ¾ 16 ¾ ¾ ¾ 4.5 ¾ ¾ ¾ ¾ Unit mA GHz dB dB dB dB dB |S21|2 |S12|2 |S22| NF 2 Fig1 f = 45 MHz f = 45 MHz f = 400 MHz f = 45 MHz f = 400 MHz f1 = 45 MHz, f2 = 44 MHz, Pin = -20dBmW f1 = 400 MHz, f2 = 399 MHz, Pin = -20dBmW Po1dB dBmW 3 rd order inter modulation IM3 dB ¾ Note 2: BW is the frequency of 3dB down from |S21| at 45 MHz. CAUTION: This device electrostatic sensitivity. Please handle with caution. 2 2 200...




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