TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4017FT
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4017FT
VHF Wide Band Amplifier Applications Fea...
Description
TA4017FT
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4017FT
VHF Wide Band Amplifier Applications Features
· · · High gain: |S21|2 = 13dB (@45 MHz) Low distortion: IM3 = 42dB (@45 MHz) Operating supply voltage: VCC = 4.75 V~5.25 V
Maximum Ratings (Ta = 25°C)
Characteristics Supply voltage Total power dissipation Operating temperature Storage temperature Symbol VCC PD (Note 1) Topr Tstg Rating 5.5 300 -40 to 85 -55 to 150 2 Unit V mW °C °C
Weight: 0.008g (typ.)
Note 1: When mounted on the glass epoxy of 2.5 cm ´ 1.6 t
Pin Assignment
OUT GND OUT (1) (2) 6 5 4
U5
1 2 3 IN (1) IN (2) VCC
1
2003-03-12
TA4017FT
Electrical Characteristics (Ta = 25°C, VCC = 5 V, Zg = Zl = 50 W)
Characteristics Circuit current Band width Input return loss Insertion gain Isolation Output return loss Noise figure Output power at 1dB gain compression Symbol ICC BW |S11|
2
Test Circuit
Test Condition Non Carrier (Note 2) f = 45 MHz f = 45 MHz f = 400 MHz f = 45 MHz
Min 15 0.7 ¾ 10 ¾ ¾ ¾ ¾ ¾ 0 ¾ 34 ¾
Typ. 19 1 -0.8 13 12.5 -40 -3.5 3 3 2 2 42 42
Max 25 ¾ ¾ 16 ¾ ¾ ¾ 4.5 ¾ ¾ ¾ ¾
Unit mA GHz dB dB dB dB dB
|S21|2 |S12|2 |S22| NF
2
Fig1
f = 45 MHz f = 45 MHz f = 400 MHz f = 45 MHz f = 400 MHz f1 = 45 MHz, f2 = 44 MHz, Pin = -20dBmW f1 = 400 MHz, f2 = 399 MHz, Pin = -20dBmW
Po1dB
dBmW
3
rd
order inter modulation
IM3
dB ¾
Note 2: BW is the frequency of 3dB down from |S21| at 45 MHz. CAUTION: This device electrostatic sensitivity. Please handle with caution.
2
2
200...
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