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TA4103F

Toshiba Semiconductor
Part Number TA4103F
Manufacturer Toshiba Semiconductor
Description 1.9GHz BAND UP CONVERTER APPLICATION
Published Aug 28, 2005
Detailed Description TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4103F 1.9 GHz Band Up Converter Application Features l Bu...
Datasheet PDF File TA4103F PDF File

TA4103F
TA4103F

Overview
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4103F 1.
9 GHz Band Up Converter Application Features l Built in Lo and IF buffer amplifiers.
l Double balanced MIX circuit l High conversion gain: GC = 3dB (typ.
) l Recommended operating voltage: VCC = 2.
7~3.
3 V Pin Assignment (top view) Marking TA4103F Weight: 0.
02 g (typ.
) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Supply voltage VCC 5V Total power dissipation PD (Note1) 300 mW Operating temperature Topr −40~85 °C Storage temperature range Tstg −55~125 °C Note 1: When mounted on the glass epoxy board of 2.
5 cm2 × 1.
6 t 000707EBA1 · TOSHIBA is continually working to improve the quality ...


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