STH6N100 STH6N100FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STH6N100 STH6N100FI
s s s s s s s
V DSS 1000 V 1000 V
R DS( on) < 2Ω < 2Ω
ID 6A 3.7 A
TYPICAL RDS(on) = 1.75 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION
3 2 1
3...
