MPS8098

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPS8098 NPN general purpose transistor Product specification File under Discrete Semiconductors, SC04 1997 May 26 Philips Semiconductors Product specification NPN general purpose transistor FEATURES Low current (max. 100 mA) Low voltage (max. 60 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. 1 handbook, halfpage MPS8098 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 1 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open base CONDITIONS open emitter − − − − 100 150 MIN. MAX. 60 60 200 500 300 − MHz V V mA mW UNIT 1997 May 26 2 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CO...