STS17NF3LL

N-CHANNEL 30V - 0.0045 Ω - 17A SO-8 STripFET™ II MOSFET FOR DC-DC CONVERSION TYPE STS17NF3LL s s s s STS17NF3LL VDSS 30 V RDS(on) <0.0055 Ω ID 17 A TYPICAL RDS(on) = 0.0045 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. Such features make it the best choice in high efficiency DC-DC converters for Telecom and computer industries. APPLICATIONS s DC-DC CONVERTERS FOR TELECOM AND NOTEBOOK CPU CORE s SYNCHRONOUS RECTIFIER SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 30 30 ± 18 17 12 68 3.2 Unit V V V A A A W () Pulse width limited by safe operating area. March 2003 . 1/8 STS17NF3LL THERMAL DATA Rthj-amb Rthj-lead Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Resistance Junction-leads Maximum Operating Junction Temperature Storage Temperature [ Max Max 47 16 -55 to 175 -55 to 175 °C/W °C/W °C °C (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t 10 sec. ELECTRICAL CHARACTERISTICS (Tcas...