STS1DNC45

STS1DNC45 DUAL N-CHANNEL 450V - 4.1Ω - 0.4A SO-8 SuperMESH™ POWER MOSFET TYPE STS1DNC45 s s VDSS 450 V RDS(on) < 4.5 Ω ID 0.4 A s TYPICAL RDS(on) = 4.1Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) s DC-DC CONVERTERS s LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) s LOW POWER BATTERY CHARGERS s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM ( ) PTOT dv/dt(1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Peak Diode Recovery voltage slope Value 450 450 ± 30 0.40 0.25 1.6 1.6 2 3 (1)ISD ≤ 0.4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W V/ns (q ) Pulse width limited by safe operating area June 2003 1/8 STS1DNC45 THERMAL DATA Rthj-amb(#) Tj Tstg Thermal Resistance Junction-ambient Max Sin...