N-CHANNEL 600V - 7Ω - 0.4A SO-8 PowerMesh™II MOSFET
PRELIMINARY DATA TYPE STS1HNC60
s s s s s
STS1HNC60
VDSS 600 V
RDS(on) <8Ω
ID 0.36 A
TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8
DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics h...
