STS1NC60

N-CHANNEL 600V - 12Ω - 0.3A - SO-8 PowerMESH™II MOSFET TYPE STS1NC60 s s s s s STS1NC60 VDSS 600 V RDS(on) < 15 Ω ID 0.3 A TYPICAL RDS(on) = 12Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS) s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT dv/dt (1) Tstg Tj . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 0.3 0.18 1.2 2.5 0.02 3 –60 to 150 150 (1)ISD ≤ 0.3A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX Unit V V V A A A W W/°C V/ns °C °C ()Pulse width limited by safe operating area July 2001 1/8 STS1NC60 THERMAL DATA Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-PC Board Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose 50 60 260 °C/W °C/W °C AVALANC...