N-CHANNEL MOSFET
STP12NM50 - STP12NM50FP
STB12NM50-1
N-CHANNEL 500V - 0.3Ω - 12A TO-220/TO-220FP/I PAK MDmesh™ Power MOSFET
TYPE
VDSS
...
Description
STP12NM50 - STP12NM50FP
STB12NM50-1
N-CHANNEL 500V - 0.3Ω - 12A TO-220/TO-220FP/I PAK MDmesh™ Power MOSFET
TYPE
VDSS
RDS(on)
ID
STP12NM50/FP
500V
<0.35Ω
12 A
STB12NM50-1
500V
<0.35Ω
12 A
s TYPICAL RDS(on) = 0.3Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
TO-220
3
2 1
TO-220FP
123
I PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP(B)12NM50(-1) STP12NM50FP
VDS Drain-source Voltage (VGS = 0)
500 V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500 V
VGS Gate- source Voltage
±30 V
ID Drain Current (continuos) at TC = 25°C
12
12(*)
A
ID Drain Current (continuos) at TC = 100°C
7.5
7.5(*)
A
IDM (q) Drain Current (pulsed)
48
48(*)
A
PTOT
Total Dissipati...
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